A New Lateral Dual Gate Power MOSFET on InGaAs with Improved Performance

We propose a new lateral power metal-oxide semiconductor field-effect transistor (MOSFET) on InGaAs. The proposed structure is obtained by incorporating two trenches in the drift region of a standard power MOSFET structure. The modified device design provides reduction in electric field in the drift region leading to significant improvement in the device performance in terms of breakdown voltage and figure-of merit. Two-dimensional numerical simulations are used to evaluate and compare the performance of new device with that of the standard MOSFET for identical cell pitch, gate length and drift region doping. Our simulation results show that the proposed device can provide 3. 2 time's higher breakdown voltage and 3. 8 times improvement in figure-of-merit over the conventional device.